RN1963 Series
Manufacturer: Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.2W US6
| Part | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type | Mounting Type | Package / Case | Resistor - Emitter Base (R2) | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Frequency - Transition | Supplier Device Package | Power - Max [Max] | Resistor - Base (R1) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 300 mV | 70 hFE | 2 NPN - Pre-Biased (Dual) | Surface Mount | 6-TSSOP SC-88 SOT-363 | 22 kOhms | 50 V | 100 nA | 100 mA | 250 MHz | US6 | 200 mW | 22 kOhms |