FDG327N Series

N-Channel PowerTrench® MOSFET, 20V, 1.5 A, 90 mΩ

Catalog

N-Channel PowerTrench® MOSFET, 20V, 1.5 A, 90 mΩ

Part	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDG327N	1.5 V	6-TSSOP SC-88 SOT-363	20 V	-55 °C	150 °C	N-Channel	423 pF	SC-88 (SC-70-6)	6.3 nC	1.5 A	Surface Mount	90 mOhm	8 V	420 mW	MOSFET (Metal Oxide)	1.8 V 4.5 V

Catalog

N-Channel PowerTrench® MOSFET, 20V, 1.5 A, 90 mΩ

Key Features

• 1.5 A, 20 V

• RDS(on)= 90 mΩ@ VGS= 4.5 V

• RDS(on)= 100 mΩ @ VGS= 2.5 V

• RDS(on)= 140 mΩ @ VGS= 1.8 V

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability.

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON)and gate charge (QG) in a small package.