SQ2308 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 2.3A SOT23-3
| Part | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Qualification | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | FET Type | Technology | Grade | Vgs(th) (Max) @ Id | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 205 pF | 5.3 nC | 150 mOhm | AEC-Q101 | 4.5 V 10 V | Surface Mount | 20 V | 2.3 A | 2 W | 60 V | N-Channel | MOSFET (Metal Oxide) | Automotive | 2.5 V | SC-59 SOT-23-3 TO-236-3 | -55 °C | 175 ░C | SOT-23-3 (TO-236) |
Vishay General Semiconductor - Diodes Division | 205 pF | 5.3 nC | 150 mOhm | AEC-Q101 | 4.5 V 10 V | Surface Mount | 20 V | 2.3 A | 2 W | 60 V | N-Channel | MOSFET (Metal Oxide) | Automotive | 2.5 V | SC-59 SOT-23-3 TO-236-3 | -55 °C | 175 ░C | SOT-23-3 (TO-236) |