High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 800 V, 0.29 Ω@10V, TO-220, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 800 V, 0.29 Ω@10V, TO-220, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 800 V, 0.29 Ω@10V, TO-220, DTMOSⅣ
| Part | Technology | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | FET Type | Vgs (Max) | Package / Case | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 150 °C | 2050 pF | 180 W | N-Channel | 20 V | TO-220-3 | 290 mOhm | 4 V | 32 nC | 17 A | Through Hole | 10 V | TO-220 | 800 V |