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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Package / Case | Vgs (Max) [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Technology | Power Dissipation (Max) [Max] | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | SC-59 SOT-23-3 TO-236-3 | -8 V | SOT-23-3 | 1.5 V | MOSFET (Metal Oxide) | 330 mW | Surface Mount | 25 V | P-Channel | 170 mA | 0.35 nC | 27.2 pF | -55 °C | 150 °C | 10 Ohm | 4.5 V | 2.7 V |
Diodes Inc | SC-59 SOT-23-3 TO-236-3 | -8 V | SOT-23-3 | 1.5 V | MOSFET (Metal Oxide) | 320 mW | Surface Mount | 25 V | P-Channel | 170 mA | 0.35 nC | 27.2 pF | -55 °C | 150 °C | 10 Ohm | 4.5 V | 2.7 V |