SN74HCS00-Q1 Series

Automotive 4-ch, 2-input, 2-V to 6-V low power NAND gates with Schmitt-trigger inputs

Catalog

Automotive 4-ch, 2-input, 2-V to 6-V low power NAND gates with Schmitt-trigger inputs

Part	Package / Case	Input Logic Level - Low [Max]	Input Logic Level - Low [Min]	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Logic Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Input Logic Level - High [Min]	Input Logic Level - High [Max]	Max Propagation Delay @ V, Max CL	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Number of Circuits	Number of Inputs	Features	Current - Output High, Low	Package / Case [x]	Package / Case [y]	Grade	Qualification
Texas Instruments SN74HCS00BQAR	14-QFN Exposed Pad	3 V	1 V	7.8 mA	7.8 mA	NAND Gate	2 V	6 V	Surface Mount	1.5 V	4.2 V	12 ns	14-WQFN (3x2.5)	-55 °C	125 °C	4	2	Schmitt Trigger Input
Texas Instruments SN74HCS00DYYR	SOT-23-14 Thin SOT-23 Variant	3 V	1 V			NAND Gate	2 V	6 V	Surface Mount	1.5 V	4.2 V	12 ns	14-SOT-23-THIN	-40 °C	125 °C	4	2	Schmitt Trigger Input	7.8 mA
Texas Instruments SN74HCS00DR	14-SOIC	3 V	1 V	7.8 mA	7.8 mA	NAND Gate	2 V	6 V	Surface Mount	1.5 V	4.2 V	12 ns		-40 °C	125 °C	4	2	Schmitt Trigger Input		0.154 in	3.9 mm
Texas Instruments SN74HCS00QDRQ1	14-SOIC	3 V	1 V	7.8 mA	7.8 mA	NAND Gate	2 V	6 V	Surface Mount	1.5 V	4.2 V	12 ns		-40 °C	125 °C	4	2	Schmitt Trigger Input		0.154 in	3.9 mm	Automotive	AEC-Q100

Catalog

Automotive 4-ch, 2-input, 2-V to 6-V low power NAND gates with Schmitt-trigger inputs

Key Features

• AEC-Q100 qualified for automotive applications:Device temperature grade 1: –40°C to +125°C, TADevice HBM ESD Classification Level 2Device CDM ESD Classifcation Level C6Available in wettable flank QFN (WRKS) packageWide operating voltage range: 2 V to 6 VSchmitt-trigger inputs allow for slow or noisy input signalsLow power consumptionTypical ICCof 100 nATypical input leakage current of ±100 nA±7.8-mA output drive at 6 VAEC-Q100 qualified for automotive applications:Device temperature grade 1: –40°C to +125°C, TADevice HBM ESD Classification Level 2Device CDM ESD Classifcation Level C6Available in wettable flank QFN (WRKS) packageWide operating voltage range: 2 V to 6 VSchmitt-trigger inputs allow for slow or noisy input signalsLow power consumptionTypical ICCof 100 nATypical input leakage current of ±100 nA±7.8-mA output drive at 6 V

Description

This device contains four independent 2-input NAND Gates with Schmitt-trigger inputs. Each gate performs the Boolean function Y =A ● Bin positive logic. This device contains four independent 2-input NAND Gates with Schmitt-trigger inputs. Each gate performs the Boolean function Y =A ● Bin positive logic.