FQU2N50B Series

Power MOSFET, N-Channel, QFET®, 500 V, 1.6 A, 5.3 Ω, IPAK

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 1.6 A, 5.3 Ω, IPAK

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
ON Semiconductor FQU2N50BTU-WS	Through Hole	8 nC	30 V	500 V	N-Channel	-55 °C	150 °C	230 pF	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	10 V	5.3 Ohm	IPAK	3.7 V	1.6 A	2.5 W 30 W

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 1.6 A, 5.3 Ω, IPAK

Key Features

• 1.6 A, 500 V, RDS(on)= 5.3 Ω (Max.) @ VGS= 10 V, ID= 0.8 A

• Low Gate Charge (Typ. 6.0 nC)

• Low Crss (Typ. 4.3 pF)

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.