SIHP7 Series

Catalog

MOSFET N-CH 600V 7A TO220AB

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIHP7N60E-E3	30 V	4 V	680 pF	600 mOhm	MOSFET (Metal Oxide)	40 nC	TO-220AB	78 W	-55 °C	150 °C	N-Channel	600 V	Through Hole	TO-220-3	7 A	10 V
Vishay General Semiconductor - Diodes Division SIHP7N60E-GE3	30 V	4 V	680 pF	600 mOhm	MOSFET (Metal Oxide)	40 nC	TO-220AB	78 W	-55 °C	150 °C	N-Channel	600 V	Through Hole	TO-220-3	7 A	10 V