TK19A45 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 450V 19A TO220SIS
| Part | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Technology | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Package / Case | Mounting Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 250 mOhm | 50 W | MOSFET (Metal Oxide) | 150 °C | 10 V | N-Channel | 2600 pF | TO-220SIS | 19 A | 450 V | TO-220-3 Full Pack | Through Hole | 30 V | 45 nC |