Catalog
Power Diode Bare Die
Key Features
• Advanced Gen VII Technology
• Fast and Soft Recovery
• Low Forward Voltage
• Easy to Parallel Operation
Description
AI
1200 V, 100 A, Gen VII, Fast Recovery Diode
Beta
⌘K
Power Diode Bare Die
Power Diode Bare Die
| Part | Technology | Current - Average Rectified (Io) | Speed | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | Standard | 100 A | 200 mA 500 ns | 347.1 ns | 1.2 kV | Die | -40 °C | 175 ░C | Surface Mount | 2.08 V | 10 µA | Wafer |