MUN5214DW1 Series

50 V, 100 mA, NPN Bipolar Digital Transistor (BRT), R1 = 10 kΩ, R2 = 47 kΩ

Catalog

50 V, 100 mA, NPN Bipolar Digital Transistor (BRT), R1 = 10 kΩ, R2 = 47 kΩ

Part	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Qualification	Transistor Type	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Grade	Supplier Device Package
ON Semiconductor SMUN5214T1G	10 kOhms	500 nA	250 mV	AEC-Q101	NPN - Pre-Biased	47000 Ohms	80	100 mA	202 mW	SC-70 SOT-323	Surface Mount	50 V	Automotive
ON Semiconductor MUN5214DW1T1G		500 nA	250 mV		2 NPN - Pre-Biased (Dual)	47000 Ohms	80	100 mA	250 mW	6-TSSOP SC-88 SOT-363	Surface Mount	50 V		SC-88 SC70-6 SOT-363

Catalog

50 V, 100 mA, NPN Bipolar Digital Transistor (BRT), R1 = 10 kΩ, R2 = 47 kΩ

Key Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Description

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.