FDB86566_F085 Series

N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ

Catalog

N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Grade	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Qualification	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology
ON Semiconductor FDB86566-F085	20 V	6655 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 V	Automotive	10 V	-55 °C	175 ░C	4 V	176 W	Surface Mount	AEC-Q101	N-Channel	TO-263 (D2PAK)	110 nC	110 A	2.7 mOhm	MOSFET (Metal Oxide)

N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ

• Typical RDS(on)= 2.2 mΩ at VGS= 10V, ID= 80 A

• Typical Qg(tot)= 80 nC at VGS= 10V, ID= 80 A

• UIS Capability

• RoHS Compliant

• Qualified to AEC Q101

N-Channel PowerTrench®MOSFET, 60 V, 110 A, 2.7 mΩ