SIHH180 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 19A PPAK 8 X 8
| Part | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Package / Case | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1085 pF | 114 W | 5 V | PowerPAK® 8 x 8 | 8-PowerTDFN | 30 V | -55 °C | 150 °C | N-Channel | Surface Mount | 19 A | 600 V | 180 mOhm | 10 V | MOSFET (Metal Oxide) |