TK10J80E Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 800 V, 1.0 Ω@10V, TO-3P(N), Π-MOSⅧ
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Mounting Type | Supplier Device Package | Technology | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 10 A | 46 nC | 1 Ohm | 2000 pF | N-Channel | Through Hole | TO-3P(N) | MOSFET (Metal Oxide) | 150 °C | 10 V | 800 V | SC-65-3 TO-3P-3 | 250 W | 30 V |