BDX54C%20(LEGACY%20FAIRCHILD) Series

8.0 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor

Catalog

8.0 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor

Part	Operating Temperature	Power - Max [Max]	Supplier Device Package	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor BDX54BTU	150 °C	60 W	TO-220-3	Through Hole	2 V	TO-220-3	8 A	500 çA	PNP - Darlington	750 hFE	80 V
ON Semiconductor BDX54ATU	150 °C	60 W	TO-220-3	Through Hole	2 V	TO-220-3	8 A	500 çA	PNP - Darlington	750 hFE		60 V
ON Semiconductor BDX54CTU	150 °C	60 W	TO-220-3	Through Hole	2 V	TO-220-3	8 A	500 çA	PNP - Darlington	750 hFE	100 V

Catalog

8.0 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor

Key Features

• High DC Current Gain hFE= 2500 (Typ) @ IC= 4.0 Adc

• Collector Emitter Sustaining Voltage @ 100 mAdcVCEO(sus)= 80 Vdc (Min) BDX53B, 54BVCEO(sus)= 100 Vdc (Min) - BDX53C, 54C

• Low Collector-Emitter Saturation VoltageVCE(sat)= 2.0 Vdc (Max) @ IC= 3.0 AdcVCE(sat)= 4.0 Vdc (Max) @ IC= 5.0 Adc

• Monolithic Construction with Built-In Base-Emitter Shunt Resistors

• TO-220AB Compact Package

• Pb-Free Packages are Available

Description

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications.Replacement Active Part Number:BDX54C