LMG3425R030 Series

600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

Catalog

600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

Part	Current - Output (Max) [Max]	Voltage - Load	Rds On (Typ)	Voltage - Supply (Vcc/Vdd) [Min]	Voltage - Supply (Vcc/Vdd) [Max]	Output Type	Supplier Device Package	Interface	Fault Protection	Features	Input Type	Switch Type	Ratio - Input:Output [custom]	Mounting Type	Number of Outputs	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Output Configuration
Texas Instruments LMG3425R030RQZR	40 A	600 V	26 mOhm	7.5 V	18 V	N/P-Channel	54-VQFN (12x12)	PWM	Current Limiting (Fixed) Over Temperature UVLO	Slew Rate Controlled Status Flag	Non-Inverting	General Purpose	1:1	Surface Mount	1	150 °C	-40 °C	54-VQFN Exposed Pad	Low Side

Catalog

600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

Key Features

• Qualified for JEDEC JEP180 for hard-switching topologies600V GaN-on-Si FET with integrated gate driverIntegrated high precision gate bias voltage200V/ns FET hold-off2.2MHz switching frequency20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigationOperates from 7.5V to 18V supplyRobust protectionCycle-by-cycle overcurrent and latched short-circuit protection with < 100ns responseWithstands 720V surge while hard-switchingSelf-protection from internal overtemperature and UVLO monitoringAdvanced power managementDigital temperature PWM outputIdeal diode mode reduces third-quadrant lossesQualified for JEDEC JEP180 for hard-switching topologies600V GaN-on-Si FET with integrated gate driverIntegrated high precision gate bias voltage200V/ns FET hold-off2.2MHz switching frequency20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigationOperates from 7.5V to 18V supplyRobust protectionCycle-by-cycle overcurrent and latched short-circuit protection with < 100ns responseWithstands 720V surge while hard-switchingSelf-protection from internal overtemperature and UVLO monitoringAdvanced power managementDigital temperature PWM outputIdeal diode mode reduces third-quadrant losses

Description

The LMG3425R030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG3425R030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. Advanced power management features include digital temperature reporting, fault detection, and ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin. Ideal diode mode reduces third-quadrant losses by enabling dead-time control. The LMG3425R030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG3425R030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. Advanced power management features include digital temperature reporting, fault detection, and ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin. Ideal diode mode reduces third-quadrant losses by enabling dead-time control.