NTHL060N065SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
ON Semiconductor NTHL060N065SC1	176 W	650 V	15 V 18 V	TO-247-3	47 A	70 mOhm	4.3 V	N-Channel	TO-247-3	1473 pF	74 nC	-55 °C	175 ░C	Through Hole

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L

Key Features

• TJ = 175°C

• Ultra Low Gate Charge (Typ. Qg = 74 nC)

• High Speed Switching with Low Capacitance (Coss = 133 pF)

• Zero reverse recovery current of body diode

• Max RDS(on) = 44 mΩ at Vgs = 18V

• 100% UIL Tested

• RoHS Compliant

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.