PJD8N Series

Catalog

500V N-CHANNEL MOSFET

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
Panjit International Inc. PJD8NA50_L2_00001	130 W	900 mOhm	30 V	Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	MOSFET (Metal Oxide)	10 V	N-Channel	150 °C	-55 °C	826 pF	16.2 nC	TO-252AA	8 A
Panjit International Inc. PJD8NA50_R2_00001		900 mOhm	30 V	Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	MOSFET (Metal Oxide)	10 V	N-Channel	150 °C	-55 °C	826 pF	16.2 nC	TO-252AA	8 A
Panjit International Inc. PJD8NA65A_L2_00001		1.2 Ohm	30 V	Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	650 V	MOSFET (Metal Oxide)	10 V	N-Channel	150 °C	-55 °C			TO-252 TO-252AA	7.5 A	1245 pF	29 nC	140 W