SI5913 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET P-CH 20V 4A 1206-8
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | FET Feature | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 20 V | 1.7 W 3.1 W | 1206-8 ChipFET™ | 1.5 V | 10 V | 2.5 V | MOSFET (Metal Oxide) | 12 nC | 330 pF | 12 V | -55 °C | 150 °C | P-Channel | Schottky Diode (Isolated) | Surface Mount | 4 A | 84 mOhm |