PSMN3 Series
Manufacturer: Freescale Semiconductor - NXP
MOSFET N-CH 30V 40A 8DFN
| Part | Power Dissipation (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id [Max] | Rds On (Max) @ Id, Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | 71 W | 8-DFN3333 | 2061 pF | Surface Mount | -55 °C | 150 °C | 8-VDFN Exposed Pad | 4.5 V 10 V | MOSFET (Metal Oxide) | 20 V | 30 V | 2.15 V | 3.6 mOhm | N-Channel | |||
Freescale Semiconductor - NXP | 79 W | LFPAK56 Power-SO8 | 1781 pF | Surface Mount | -55 °C | 175 ░C | SC-100 SOT-669 | 4.5 V 10 V | MOSFET (Metal Oxide) | 20 V | 25 V | 3.4 mOhm | N-Channel | 100 A | 30 nC | ||
Freescale Semiconductor - NXP | 64 W | LFPAK56 Power-SO8 | 1585 pF | Surface Mount | -55 °C | 175 ░C | SC-100 SOT-669 | 4.5 V 10 V | MOSFET (Metal Oxide) | 20 V | 25 V | N-Channel | 97 A | 21.6 nC | |||
Freescale Semiconductor - NXP |