IRF734 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 450V 4.9A TO220AB
| Part | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Package / Case | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Technology | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 10 V | 1.2 Ohm | Through Hole | TO-220AB | -55 °C | 150 °C | 20 V | 4 V | TO-220-3 | 74 W | 680 pF | 4.9 A | MOSFET (Metal Oxide) | N-Channel | 45 nC | 450 V |
Vishay General Semiconductor - Diodes Division | 10 V | 1.2 Ohm | Through Hole | TO-220AB | -55 °C | 150 °C | 20 V | 4 V | TO-220-3 | 74 W | 680 pF | 4.9 A | MOSFET (Metal Oxide) | N-Channel | 45 nC | 450 V |