IRFR9210 Series

Catalog

MOSFET P-CH 200V 1.9A DPAK

Part	Power Dissipation (Max)	Technology	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division IRFR9210	2.5 W 25 W	MOSFET (Metal Oxide)	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 V	170 pF	20 V	1.9 A	4 V	P-Channel	10 V	8.9 nC	DPAK	-55 °C	150 °C	3 Ohm
Vishay General Semiconductor - Diodes Division IRFR9210TRLPBF	2.5 W 25 W	MOSFET (Metal Oxide)	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 V	170 pF	20 V	1.9 A	4 V	P-Channel	10 V	8.9 nC	DPAK	-55 °C	150 °C	3 Ohm
Vishay General Semiconductor - Diodes Division IRFR9210PBF	2.5 W 25 W	MOSFET (Metal Oxide)	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 V	170 pF	20 V	1.9 A	4 V	P-Channel	10 V	8.9 nC	DPAK	-55 °C	150 °C	3 Ohm
Vishay General Semiconductor - Diodes Division IRFR9210TR	2.5 W 25 W	MOSFET (Metal Oxide)	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 V	170 pF	20 V	1.9 A	4 V	P-Channel	10 V	8.9 nC	DPAK	-55 °C	150 °C	3 Ohm