SI7898 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 150V 3A PPAK SO-8
| Part | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3 A | MOSFET (Metal Oxide) | 20 V | 21 nC | N-Channel | 1.9 W | 4 V | PowerPAK® SO-8 | 6 V 10 V | PowerPAK® SO-8 | -55 °C | 150 °C | 150 V | Surface Mount |
Vishay General Semiconductor - Diodes Division | 3 A | MOSFET (Metal Oxide) | 20 V | 21 nC | N-Channel | 1.9 W | 4 V | PowerPAK® SO-8 | 6 V 10 V | PowerPAK® SO-8 | -55 °C | 150 °C | 150 V | Surface Mount |