YQ3VWM10B Series

Trench MOS Structure, 100V, 3A, PMDE, Highly Efficient SBD

Catalog

Trench MOS Structure, 100V, 3A, PMDE, Highly Efficient SBD

Part	Operating Temperature - Junction	Current - Reverse Leakage @ Vr	Package / Case	Speed	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Technology
Rohm Semiconductor YQ3VWM10BTR	175 °C	10 µA	2-SMD Flat Leads	200 mA 500 ns	Surface Mount	PMDE	3 A	50 pF	880 mV	100 V	Schottky

Catalog

Trench MOS Structure, 100V, 3A, PMDE, Highly Efficient SBD

Description

The YQ3VWM10B is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.