PSMN015 Series
Manufacturer: Freescale Semiconductor - NXP
N-CHANNEL TRENCHMOS SILICONMAX STANDARD LEVEL FET@EN-US TO-220 3-PIN
| Part | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Package / Case | Supplier Device Package | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | N-Channel | 4900 pF | 300 W | TO-220-3 | TO-220AB | Through Hole | 75 A | 20 V | -55 °C | 175 ░C | 15 mOhm | MOSFET (Metal Oxide) | 10 V | 90 nC | 100 V | |||||
Freescale Semiconductor - NXP | N-Channel | 6139 pF | SC-100 SOT-669 | LFPAK56 Power-SO8 | Surface Mount | 69 A | 20 V | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 86.3 nC | 100 V | 195 W | 10 V | 5 V | 14.7 mOhm | 2.1 V | |||
Freescale Semiconductor - NXP | N-Channel | 1220 pF | TO-220-3 | TO-220AB | Through Hole | 50 A | 20 V | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 10 V | 20.9 nC | 60 V | 86 W | 14.8 mOhm |