RF4E080BN Series
Manufacturer: Rohm Semiconductor
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MOSFET N-CH 30V 8A HUML2020L8
| Part | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Power Dissipation (Max) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | FET Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 4.5 V 10 V | HUML2020L8 | 2 W | 8-PowerUDFN | 660 pF | 150 °C | 8 A | Surface Mount | 2 V | 30 V | N-Channel | 20 V | 14.5 nC | MOSFET (Metal Oxide) | 17.6 mOhm |