SQD100 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 20V 100A TO252AA
| Part | Vgs (Max) | Power Dissipation (Max) | Qualification | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Package / Case | Grade | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 20 V | 83 W | AEC-Q101 | 20 V | MOSFET (Metal Oxide) | 5500 pF | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Automotive | 3.5 mOhm | 110 nC | 100 A | 4.5 V 10 V | TO-252AA | 2.5 V | -55 °C | 175 ░C | Surface Mount | |
Vishay General Semiconductor - Diodes Division | 20 V | 136 W | AEC-Q101 | 30 V | MOSFET (Metal Oxide) | 6316 pF | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Automotive | 3.2 mOhm | 116 nC | 100 A | 4.5 V 10 V | TO-252AA | 2.5 V | -55 °C | 175 ░C | Surface Mount | |
Vishay General Semiconductor - Diodes Division | 20 V | 136 W | AEC-Q101 | 40 V | MOSFET (Metal Oxide) | 6700 pF | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Automotive | 3.6 mOhm | 100 A | 10 V | TO-252AA | 3.5 V | -55 °C | 347 °F | Surface Mount | 105 nC |