NVMYS6D2N06CL Series

Power MOSFET, Single N-Channel, 60 V, 6.2mΩ, 69 A

Catalog

Power MOSFET, Single N-Channel, 60 V, 6.2mΩ, 69 A

Part	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [x]	Qualification	FET Type	Power Dissipation (Max)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NVMYS6D2N06CLTWG	Surface Mount	MOSFET (Metal Oxide)	6.1 mOhm	20 nC	AEC-Q101	N-Channel	3.6 W 61 W	5	LFPAK4	6	SOT-1023 4-LFPAK	2 V	17 A 71 A	-55 °C	175 ░C	Automotive	20 V	60 V	1400 pF

Catalog

Power MOSFET, Single N-Channel, 60 V, 6.2mΩ, 69 A

Key Features

• Small Footprint (5x6 mm)

• Low RDS(on)

• Low QGand Capacitance

• LFPAK4 Package, Industry Standard

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.