SI5441 Series

Catalog

MOSFET P-CH 20V 3.9A 1206-8

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SI5441DC-T1-E3	Surface Mount	3.9 A	1.4 V	2.5 V 4.5 V	-55 °C	150 °C	1.3 W	20 V	12 V	1206-8 ChipFET™	22 nC	P-Channel	MOSFET (Metal Oxide)	55 mOhm
Vishay General Semiconductor - Diodes Division SI5441DC-T1-GE3	Surface Mount	3.9 A	1.4 V	2.5 V 4.5 V	-55 °C	150 °C	1.3 W	20 V	12 V	1206-8 ChipFET™	22 nC	P-Channel	MOSFET (Metal Oxide)	55 mOhm