MURTA500 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 600V 250A 3TOWER
| Part | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Package / Case | Mounting Type | Diode Configuration | Reverse Recovery Time (trr) | Technology | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If [Max] | Speed [Min] | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | -55 °C | 150 °C | 200 mA 500 ns | 600 V | Three Tower | Three Tower | Chassis Mount | 1 Pair Common Anode | 250 ns | Standard | 1.7 V | 250 A | |||
GeneSiC Semiconductor | -55 °C | 150 °C | 200 mA 500 ns | 400 V | Three Tower | Three Tower | Chassis Mount | 1 Pair Common Cathode | 150 ns | Standard | 1.5 V | 250 A | |||
GeneSiC Semiconductor | -55 °C | 150 °C | 200 mA 500 ns | 200 V | Three Tower | Three Tower | Chassis Mount | 1 Pair Common Cathode | 150 ns | Standard | 250 A | 1.3 V | |||
GeneSiC Semiconductor | -55 °C | 150 °C | 200 mA 500 ns | 400 V | Three Tower | Three Tower | Chassis Mount | 1 Pair Common Anode | 150 ns | Standard | 1.5 V | 250 A | |||
GeneSiC Semiconductor | -55 °C | 150 °C | 1.2 kV | Three Tower | Three Tower | Chassis Mount | 1 Pair Common Anode | Standard | 2.6 V | 250 A | 200 mA 500 ns | 25 µA | |||
GeneSiC Semiconductor | -55 °C | 150 °C | 200 mA 500 ns | 200 V | Three Tower | Three Tower | Chassis Mount | 1 Pair Common Anode | 150 ns | Standard | 250 A | 1.3 V | |||
GeneSiC Semiconductor | -55 °C | 150 °C | 200 mA 500 ns | 600 V | Three Tower | Three Tower | Chassis Mount | 1 Pair Common Cathode | 250 ns | Standard | 1.7 V | 250 A |