BUK9Y22-60EL Series

Single N-channel 60 V, 15 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology

Manufacturer: Freescale Semiconductor - NXP

Catalog

Single N-channel 60 V, 15 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology

Part	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Qualification	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)
Freescale Semiconductor - NXP BUK9Y22-60ELX	60 V	SC-100 SOT-669	Surface Mount	2.1 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	Automotive	AEC-Q101	95 W	2592 pF	48 nC	4.5 V 10 V	50 A	N-Channel	LFPAK56 Power-SO8	14.8 mOhm	10 V

Catalog

Single N-channel 60 V, 15 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology

Key Features

• High robustness and current handling capability

• Gull wing leads for easy AOI inspection and exceptional board level reliability

Description

Single, logic level, N-channel MOSFET in LFPAK56 using Application specific (ASFET) Enhanced SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear mode in airbag applications.