SIHP12 Series

Catalog

MOSFET N-CH 600V 12A TO220AB

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SIHP12N60E-E3	-55 °C	150 °C	TO-220-3	MOSFET (Metal Oxide)	Through Hole	147 W	380 mOhm	12 A	4 V	58 nC	N-Channel	600 V	30 V	937 pF	10 V	TO-220AB
Vishay General Semiconductor - Diodes Division SIHP12N50E-GE3	-55 °C	150 °C	TO-220-3	MOSFET (Metal Oxide)	Through Hole		380 mOhm	10.5 A	4 V	50 nC	N-Channel	500 V	30 V	886 pF	10 V	TO-220AB	114 W
Vishay General Semiconductor - Diodes Division SIHP12N60E-GE3	-55 °C	150 °C	TO-220-3	MOSFET (Metal Oxide)	Through Hole	147 W	380 mOhm	12 A	4 V	58 nC	N-Channel	600 V	30 V	937 pF	10 V	TO-220AB