60 V, dual N-channel Trench MOSFET
60 V, dual N-channel Trench MOSFET
| Part | FET Feature | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Configuration | Supplier Device Package | Package / Case | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | Logic Level Gate | MOSFET (Metal Oxide) | 260 mA | 2.1 V | -55 °C | 150 °C | Surface Mount | 1 nC | 285 mW | 23.6 pF | 2.8 Ohm | 2 N-Channel (Dual) | DFN1010B-6 | 6-XFDFN Exposed Pad | 60 V |