SI1051 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET P-CH 8V 1.2A SC89-6
| Part | Current - Continuous Drain (Id) @ 25°C | Technology | FET Type | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Package / Case | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1.2 A | MOSFET (Metal Oxide) | P-Channel | 122 mOhm | -55 °C | 150 °C | 9.45 nC | Surface Mount | SOT-563 SOT-666 | 236 mW | 1.5 V 4.5 V | 560 pF | 5 V | 1 V | SC-89 (SOT-563F) | 8 V |