Catalog
650V, 20A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching.
Beta
⌘K
650V, 20A, THD, Silicon-carbide (SiC) SBD
650V, 20A, THD, Silicon-carbide (SiC) SBD
| Part | Technology | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Reverse Recovery Time (trr) | Supplier Device Package | Package / Case | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | SiC (Silicon Carbide) Schottky | 1.5 V | Through Hole | 0 ns | TO-220ACFP | TO-220-2 | 100 µA | 1000 pF | 650 V | 500 mA | 175 °C |