SIS822 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 12A PPAK1212-8
| Part | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs (Max) | FET Type | Package / Case | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 4.5 V 10 V | -55 °C | 150 °C | 15.6 W | 435 pF | 12 A | 30 V | 20 V | N-Channel | PowerPAK® 1212-8 | 2.5 V | 12 nC | PowerPAK® 1212-8 | Surface Mount | MOSFET (Metal Oxide) |