SIA108 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 80V 6.6A/12A PPAK
| Part | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Package / Case | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 6.6 A 12 A | -55 °C | 150 °C | MOSFET (Metal Oxide) | PowerPAK® SC-70-6 | 80 V | 4 V | 3.5 W 19 W | N-Channel | 13 nC | 10 V | 7.5 V | 545 pF | 20 V | 38 mOhm | Surface Mount | PowerPAK® SC-70-6 |