50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ
50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ
50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ
| Part | Frequency - Transition | Current - Collector Cutoff (Max) [Max] | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Resistor - Emitter Base (R2) | Package / Case | Mounting Type | Supplier Device Package | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Resistor - Base (R1) | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 210 MHz | 500 nA | 2 NPN - Pre-Biased | 50 V | 10 kOhms | 6-UFDFN Exposed Pad | Surface Mount | 6-HUSON (2x2) | 360 mW | 100 mV | 2.2 kOhm | 500 mA | 70 | ||
Nexperia USA Inc. | 210 MHz | 500 nA | 2 NPN - Pre-Biased | 50 V | 10 kOhms | 6-UDFN Exposed Pad | Surface Mount | DFN2020D-6 | 360 mW | 100 mV | 2.2 kOhm | 500 mA | 70 | Automotive | AEC-Q101 |