IRFP9140 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 100V 21A TO247-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Power Dissipation (Max) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 175 ░C | TO-247-3 | 1400 pF | TO-247AC | P-Channel | 10 V | 4 V | 100 V | MOSFET (Metal Oxide) | 61 nC | 20 V | 180 W | Through Hole | 21 A | 200 mOhm |
Vishay General Semiconductor - Diodes Division | -55 °C | 175 ░C | TO-247-3 | 1400 pF | TO-247AC | P-Channel | 10 V | 4 V | 100 V | MOSFET (Metal Oxide) | 61 nC | 20 V | 180 W | Through Hole | 21 A | 200 mOhm |