IRFI830 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 500V 3.1A TO220-3
| Part | Power Dissipation (Max) [Max] | Package / Case | Drain to Source Voltage (Vdss) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | FET Type | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 35 W | TO-220-3 Full Pack Isolated Tab | 500 V | MOSFET (Metal Oxide) | 10 V | TO-220-3 | Through Hole | 3.1 A | 610 pF | 20 V | 38 nC | 1.5 Ohm | N-Channel | 4 V | -55 °C | 150 °C |