1N6481 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO213AB
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Speed [Min] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 400 V | DO-213AB MELF (Glass) | 10 µA | 1 A | 8 pF | 1.1 V | 200 mA 500 ns | 175 ░C | -65 C | DO-213AB | Surface Mount | Standard |
Vishay General Semiconductor - Diodes Division | 400 V | DO-213AB MELF (Glass) | 10 µA | 1 A | 8 pF | 1.1 V | 200 mA 500 ns | 175 ░C | -65 C | DO-213AB | Surface Mount | Standard |
Vishay General Semiconductor - Diodes Division | 400 V | DO-213AB MELF (Glass) | 10 µA | 1 A | 8 pF | 1.1 V | 200 mA 500 ns | 175 ░C | -65 C | DO-213AB | Surface Mount | Standard |