SI4920 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 30V 8SOIC
| Part | Supplier Device Package | FET Feature | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Configuration | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 8-SOIC | Logic Level Gate | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | Surface Mount | 23 nC | 2 W | 2 N-Channel (Dual) | 25 mOhm | 30 V | 1 V |