CSD16415Q5 Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

Part	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs
Texas Instruments CSD16415Q5T	N-Channel	8-VSON-CLIP (5x6)	-55 °C	150 °C	MOSFET (Metal Oxide)	4.5 V 10 V	3.2 W	1.9 V	8-PowerTDFN	25 V	29 nC	100 A	-12 V 16 V	4100 pF	Surface Mount	1.15 mOhm
Texas Instruments CSD16415Q5	N-Channel	8-VSON-CLIP (5x6)	-55 °C	150 °C	MOSFET (Metal Oxide)	4.5 V 10 V	3.2 W	1.9 V	8-PowerTDFN	25 V	29 nC	100 A	-12 V 16 V	4100 pF	Surface Mount	1.15 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

Key Features

• Ultralow Qgand QgdVery Low On-ResistanceLow Thermal ResistanceAvalanche RatedPb-Free Terminal PlatingRoHS CompliantHalogen-FreeUltralow Qgand QgdVery Low On-ResistanceLow Thermal ResistanceAvalanche RatedPb-Free Terminal PlatingRoHS CompliantHalogen-Free

Description

This 25 V, 1.3 mΩ, 5 × 6 mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. This 25 V, 1.3 mΩ, 5 × 6 mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.