MBR60020 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 20V 300A 2TOWER
| Part | Supplier Device Package | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Diode Configuration | Speed | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Technology | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Twin Tower | Chassis Mount | 20 V | 300 A | 580 mV | 3 mA | 1 Pair Common Cathode | 200 mA 500 ns | Twin Tower | -55 °C | 150 °C | Schottky | |
GeneSiC Semiconductor | Twin Tower | Chassis Mount | 20 V | 300 A | 1 mA | 1 Pair Common Anode | 200 mA 500 ns | Twin Tower | -55 °C | 150 °C | Schottky | 750 mV | |
GeneSiC Semiconductor | Twin Tower | Chassis Mount | 20 V | 300 A | 580 mV | 3 mA | 1 Pair Common Anode | 200 mA 500 ns | Twin Tower | -55 °C | 150 °C | Schottky | |
GeneSiC Semiconductor | Twin Tower | Chassis Mount | 20 V | 300 A | 1 mA | 1 Pair Common Cathode | 200 mA 500 ns | Twin Tower | -55 °C | 150 °C | Schottky | 750 mV |