S5P Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1.8A TO277A
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Speed | Supplier Device Package | Current - Average Rectified (Io) | Capacitance @ Vr, F | Package / Case | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 150 °C | -55 °C | 10 çA | Standard | 1000 V | Standard Recovery >500ns | 200 mA | TO-277A (SMPC) | 1.8 A | 30 pF | 3-PowerDFN TO-277 | 1.15 V | Surface Mount | 2.5 µs |
Vishay General Semiconductor - Diodes Division | 150 °C | -55 °C | 10 çA | Standard | 1000 V | Standard Recovery >500ns | 200 mA | TO-277A (SMPC) | 1.8 A | 30 pF | 3-PowerDFN TO-277 | 1.15 V | Surface Mount | 2.5 µs |