TT8U2 Series

Catalog

MOSFET P-CH 20V 2.4A 8TSST

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max) [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
Rohm Semiconductor TT8U2TR	2.4 A	150 °C	1.5 V 4.5 V	10 V	850 pF	20 V	Surface Mount	P-Channel	Schottky Diode (Isolated)	6.7 nC	MOSFET (Metal Oxide)	1.25 W	8-TSST	105 mOhm	1 V
Rohm Semiconductor TT8U2TCR	2.4 A	150 °C	1.5 V 4.5 V	10 V	850 pF	20 V	Surface Mount	P-Channel	Schottky Diode (Isolated)	6.7 nC	MOSFET (Metal Oxide)	1.25 W	8-TSST	105 mOhm	1 V