SIHP068 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 41A TO220AB
| Part | Package / Case | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Mounting Type | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | TO-220-3 | MOSFET (Metal Oxide) | 77 nC | 30 V | 41 A | 5 V | Through Hole | 68 mOhm | -55 °C | 150 °C | 10 V | 2628 pF | 250 W | TO-220AB | N-Channel | 600 V |