50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ
50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ
50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ
| Part | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type | Resistor - Base (R1) | Package / Case | Resistor - Emitter Base (R2) | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 150 mV | 50 V | 100 mA | 300 mW | 80 | Surface Mount | 22 kOhms | SOT-563 SOT-666 | 47 kOhms | 1 µA | SOT-666 | 2 NPN - Pre-Biased (Dual) |