EM6K34 Series

0.9V Drive Nch+Nch MOSFET

Catalog

0.9V Drive Nch+Nch MOSFET

Part	Package / Case	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Configuration	FET Feature	FET Feature	Current - Continuous Drain (Id) @ 25°C	Operating Temperature
Rohm Semiconductor EM6K34T2CR	SOT-563 SOT-666	MOSFET (Metal Oxide)	800 mV	EMT6	50 V	120 mW	26 pF	Surface Mount	2 N-Channel (Dual)	Logic Level Gate	0.9 V	200 mA	150 °C

Catalog

0.9V Drive Nch+Nch MOSFET

Key Features

• High speed switing., Small package(EMT6)., Ultra low voltage drive(0.9V drive).

Description

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.