SI7860 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 30V 11A PPAK SO-8
| Part | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Technology | Power Dissipation (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | -55 °C | 150 °C | 20 V | 30 V | 11 A | 9.5 mOhm | 18 nC | MOSFET (Metal Oxide) | 1.8 W | N-Channel | 4.5 V 10 V | 3 V | |
Vishay General Semiconductor - Diodes Division | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | -55 °C | 150 °C | 20 V | 30 V | 11 A | 18 nC | MOSFET (Metal Oxide) | 1.8 W | N-Channel | 4.5 V 10 V | 3 V | 8 mOhm |